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库存状态：现货
主要用于半导体制造中，通过原子层沉积（ALD）技术在晶圆表面形成超薄、均匀的功能性薄膜。其核心作用是实现高 k 介质层（如 HfO₂）、金属栅极（如 TiN）及扩散阻挡层的原子级精度沉积，尤其适用于 3D NAND 闪存芯片的高深宽比结构（如超 100 微米深孔），确保薄膜均匀性误差＜3%56。该设备支持先进制程节点，可提升芯片性能与良率，满足 5nm 及以下工艺的高精度需求59。
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